Millimeter wave (MMW) transceiver module with transmitter, receiver and local oscillator frequency multiplier surface mounted chip set

ABSTRACT

A millimeter wave (MMW) transceiver module includes a microwave monolithic integrated circuit (MMIC) transceiver chip set that is surface mounted on a circuit board. The MMIC transceiver chip set includes a receiver MMIC chip package, a transmitter MMIC chip package, and a local oscillator (LO) multiplier MMIC chip package. Each MMIC chip package includes a base and a multilayer substrate board formed from layers of low temperature transfer tape. The multilayer substrate board has at least three layers and carries RF signals, DC signals, grounding and embedded passive components, including resistors and capacitors. At least one MMIC chip is received on the multilayer substrate board.

RELATED APPLICATION

[0001] This application is based upon prior filed copending provisionalapplication Serial No. 60/292,389 filed May 21, 2001.

FIELD OF THE INVENTION

[0002] This invention relates to microwave monolithic integrated circuit(MMIC) radio frequency modules, and more particularly, this inventionrelates to a millimeter wave (MMW) transceiver module using microwavemonolithic integrated circuit (MMIC) chip packages.

BACKGROUND OF THE INVENTION

[0003] Microwave monolithic integrated circuits (MMIC) used in radiofrequency (RF) modules have traditionally been built in low to mediumvolume. The key elements that prevented this technology from attaininghigh volume production, similar to surface mount technology components,is the difficulty in working with fragile MMIC chips and the tighttolerances required when manufacturing such components.

[0004] A millimeter wave (MMW) module is typically made up of dozens ofMMIC chips, substrates and discrete components mounted with epoxy orsolder to a Coefficient of Thermal Expansion (CTE) matched carrier orsimilar machined housing. The radio frequency components are typicallyconnected to other components and terminal pads via wire or ribbonbonds. Tuning of the radio frequency modules after assembly is almostalways required.

[0005] Although many chip manufacturers are now offering individual MMICchips in a surface mount package, an entire receiver, transmitter orlocal oscillator (LO) multiplier have not been provided in a single chippackage to enable production of a MMW module with fewer surface mountedcomponents. In addition, the unavailability of a wide array of surfacemount MMIC chips has caused designers to shy away from their use becauseof the requirement to mix bare die with surface mount chips.

[0006] Another reason why single transmitter, receiver or LO multiplierMMIC chip packages have not been available is because these types ofdevices require some level of filtering of unwanted signals. A receiverrequires image rejection, a transmitter requires local oscillator (LO)signal rejection, and a frequency multiplier requires filtering of afundamental frequency. Prior art filters used in conjunction with suchdevices were traditionally made from thin film material, and were toolarge to mount into a small chip package. Some prior art devices,however, have been fabricated as a MMW receiver chip using image rejectmixers, such as shown in FIG. 1.

[0007]FIG. 1 illustrates a receiver chip 20, having a low noiseamplifier 22 that receives the radio frequency signal, a capacitor 24connected to ground, and DC signal coming in and operative at drainvoltage V_(d). An image reject mixer 26 receives the local oscillator(LO) signal and is operative with in-phase (I) and quadrature (Q)channels. An external L-band hybrid combiner 28 receives theintermediate frequency, as illustrated. These receiver chips have notseen wide commercial acceptance because of their limited image rejectperformances and the requirement to use an external I/Q hybrid combiner28 to obtain a single IF output. A hybrid combiner at L-band also isvery large in comparison to the high frequency chips used in suchdevices.

SUMMARY OF THE INVENTION

[0008] The present invention advantageously overcomes the prior artdrawbacks and provides a millimeter wave (MMW) transceiver module andmethod of fabricating same by using a low cost microwave monolithicintegrated circuit (MMIC) transceiver chip set that is surface mountedon a circuit board, such as a printed circuit board of the type known tothose skilled in the art. The MMIC chips are provided as miniature sizedsurface mount packages and use multilayer, low temperature, co-firedceramic thick film technology, such as formed from layers of lowtemperature transfer tape using fabrication techniques known to thoseskilled in the art.

[0009] In accordance with one aspect of the present invention, themillimeter wave (MMW) transceiver module of the present inventionincludes a circuit board and a microwave monolithic integrated circuit(MMIC) transceiver chip set that is surface mounted on the circuitboard. The MMIC transceiver chip set includes a receiver MMIC chippackage, a transmitter MMIC chip package, and a local oscillator (LO)multiplier MMIC chip package. Each chip package is surface mounted onthe circuit board. These components are operatively connected to eachother through appropriate connections via the circuit board formillimeter wave transceiver operation. Each MMIC chip package includes abase and a multilayer substrate board formed from layers of lowtemperature transfer tape and received on the base. The multilayersubstrate board has at least three layers and carries RF signals, DCsignals, grounding and embedded passive components, including resistorsand capacitors. MMIC chips are received on the multilayer substrate.

[0010] In one aspect of the present invention, a filter is formed on themultilayer substrate board and operatively connected to the at least oneMMIC chip. The filter is formed by vertically stacked resonators in themultilayer substrate board. In one aspect of the present invention, thefilter includes a plurality of coupled line millimeter wavelengthresonators formed as stripline or microstrip and positioned on a filtersurface defined on the multilayer substrate board. The filter includesradio frequency contacts and conductive vias extending through themultilayer substrate board. The filter could also include a plurality ofisolation vias extending through the multilayer substrate board.

[0011] In yet another aspect of the present invention, the base can beformed as an alumina plate that is metal plated. Heat sink vias could beformed within the base. The multilayer substrate board also includes asubstrate on which the low temperature transfer tape layers are mounted.Each layer of low temperature transfer tape could be about three milthick, but the range in dimensions could be higher or lower as designedand fabricated by one skilled in the art. A top layer of the multilayersubstrate board has chip cut-outs for receiving MMIC chips therein. Aplurality of interconnects and interconnect vias are positioned withinthe low temperature transfer tape layers forming the substrate board.

[0012] In another aspect of the present invention, the receiver MMICchip package includes a low noise amplifier, a mixer and an imagerejection filter. The transmitter MMIC chip package includes a poweramplifier, mixer and a local oscillator signal filter. The localoscillator multiplier MMIC chip package includes an x-band mixer,amplifier and a filter for filtering a fundamental frequency.

[0013] A method is also disclosed for forming the millimeter wave (MMW)transceiver module of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Other objects, features and advantages of the present inventionwill become apparent from the detailed description of the inventionwhich follows, when considered in light of the accompanying drawings inwhich:

[0015]FIG. 1 is a block diagram of a prior art receiver with imagereject mixer and an external L-band hybrid combiner.

[0016]FIG. 2A is a block diagram of a receiver circuit architecture thatcan be implemented in a single composite microwave monolithic integratedcircuit chip package and showing in block format a transmitter MMIC chippackage and local oscillator multiplier chip package surface mounted ona circuit board.

[0017]FIG. 2B is a plan view of the layout of the multilayer substrateboard for the receiver MMIC chip package of the present invention.

[0018]FIG. 3 is a plan view of a base formed as an alumina plate that ismetal plated, in accordance with one aspect of the present invention.

[0019]FIG. 4A is a plan view of an interconnect layer as one of thelayers used in the multilayer substrate board, in accordance with oneaspect of the present invention.

[0020]FIG. 4B is a plan view of an example of a top layer of themultilayer substrate board that can be used in the present invention.

[0021]FIG. 5A is a block diagram of a transmitter circuit that could beused for the transmitter MMIC chip package of the present invention.

[0022]FIG. 5B is a plan view of the layout of a transmitter MMIC chippackage multilayer substrate board.

[0023]FIG. 6 is a block diagram of a local oscillator multiplier circuitarchitecture that can be used for the local oscillator (LO) multiplierMMIC chip package of the present invention.

[0024]FIG. 6B is a plan view of a multilayer substrate board that can beused for the local oscillator (LO) multiplier MMIC chip package.

[0025]FIG. 7 is an exploded isometric view of a multilayer, thick film,millimeter wave radio frequency transceiver module as an example offabrication techniques that could be applied to the present inventionand showing a cover, channelization section, multilayer thick filmsection and a lower plate.

[0026]FIG. 8 is an exploded isometric view of various layers of a thickfilm section showing an example of fabrication techniques that could beapplied to the present invention.

[0027]FIG. 9 is an exploded isometric view of a transceiver module andshowing various connections as an example of fabrication techniques thatcould be applied to the present invention.

[0028] FIGS. 10-15 are examples of filters formed in low temperatureco-fired ceramic layer material such as low temperature transfer tapeand shown as examples of fabrication techniques that can be applied tothe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] The present invention will now be described more fullyhereinafter with reference to the accompanying drawings, in whichpreferred embodiments of the invention are shown. This invention may,however, be embodied in many different forms and should not be construedas limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the invention to thoseskilled in the art. Like numbers refer to like elements throughout.

[0030] The present invention is advantageous and uses advances inmultilayer, low temperature, co-fired ceramic, thick film technology toprovide an advanced design and efficient fabrication of a microwavemonolithic integrated circuit (MMIC) transceiver module by providing alow cost MMIC transceiver chip set, including receiver, transmitter andlocal oscillator multiplier chip packages that measure only about 0.2 by0.25 inches, in one aspect of the present invention, as a non-limitingexample. As to the semiconductor devices, it should be understood thatcommercial off-the-shelf (COTS) devices can be used to fabricate themodule and chip packages of the present invention.

[0031]FIG. 2A is a block diagram of a receiver circuit architecture andshows a receiver circuit that can be implemented in a low cost receiverMMIC chip package of the present invention as indicated by the dashedlines at 30. The receiver MMIC chip package 30 is surface mounted on aprinted circuit board 32, as an example, together with a transmitterMMIC chip package 34 and local oscillator (LO) multiplier chip package36.

[0032] As illustrated in FIG. 2A, a low noise amplifier 38 receives aradio frequency signal and a DC signal with drain voltage V_(d) that iscapacitor 40 connected to ground. A bandpass filter 42 is operative witha mixer 44 that receives a local oscillator signal and intermediatefrequency using circuit techniques and fundamentals known to thoseskilled in the art. The present invention provides a multilayer, lowtemperature, co-fired ceramic film substrate board 46, as shown in FIG.2B, that implements the receiver circuit architecture in a singlecomposite chip. As illustrated, the low noise amplifier 38 and mixerMMIC chips 38,44 are operatively connected to an image reject filter 42that can be formed by fabrication techniques as described in commonlyassigned U.S. patent application Ser. No. 09/933,128, filed Aug. 20,201, and titled “Millimeter Wave Filter For Surface Mount Applications,”the disclosure which is hereby incorporated by reference in itsentirety.

[0033] As illustrated, the low noise amplifier 38, filter 42 and mixer44 are operatively connected using pads 50 formed on the substrate 46.The filter includes isolation vias 52 dispersed around the formed filter42. Other connection points as terminals 54 are for DC signals, radiofrequency signals, intermediate frequency signals, and local oscillatorsignals. Other formed components, such as a cap 56, are illustrated. Thedifferent layers include interconnects, traces, embedded passivecomponents and other circuit components and connections as describedbelow and as suggested by those skilled in the art.

[0034]FIG. 3 illustrates a low cost base plate 58 that receives themultilayer thick film, low temperature, co-fired ceramic film layersforming the multilayer substrate board 46, and a cover (not shown), suchas made out of a 10-15 mil alumina, in one aspect of the presentinvention. The base plate 58 can be formed from alumina or othermaterials suggested by those skilled in the art, and is plated with ametal, such as gold, as indicated by the darker colored areas 58 a. Themetallized surface 58 a can be for soldering, grounding, and other uses.

[0035] The multilayer substrate board 46 is preferably fabricated usinglow temperature transfer tape (LTTT) technology and closely follows thesteps used in well established multilayer thick film processing,including multiple dielectric printing per layer, as replaced by a tapelamination step. Although low temperature transfer tape technology isnot the only type of fabrication technology that can be used with thepresent invention, it is preferred. Both gold and silver conductorsystems can be used with low temperature transfer tape technology andcan be applied to a wide variety of dielectric materials and substrates,although a material that has been selected as an example for thisapplication is a standard 96% alumina substrate. As illustrated,terminals 60 are formed for DC signals, an intermediate frequency (IF)signal, and a radio frequency (RF) signal. Heat sink vias 62 are formedwithin the base plate 58 by techniques known to those skilled in theart.

[0036] The multilayer substrate board 46 can include at least threelayers, such as formed from low temperature transfer tape as described.These layers can carry RF signals, DC signals, grounding, and embeddedpassive components, including resistors and capacitors. Further detailsof fabrication techniques of a multilayer substrate board that could beused as modified for the present invention are disclosed in commonlyassigned U.S. patent application Ser. No. 09/863,030, filed May 22,2001, and titled “Thick Film Millimeter Wave Transceiver Module,” thedisclosure which is hereby incorporated by reference in its entirety.

[0037] Special formulated conductive material can be screen printed on asubstrate, such as an alumina substrate, using standard thick filmequipment and processing techniques developed for forming conductiveinterconnects and interlayer vias. Tape sheets can be bonded to asubstrate using the combination of heat and pressure, as known to thoseskilled in the art.

[0038]FIGS. 4A and 4B illustrate examples of the types of layers thatcould be used for the present invention. FIG. 4A illustrates aninterconnect layer 64 having interconnect vias 64 a and interconnectlines 64 b as formed by techniques known to those skilled in the art.The total number of layers can vary, and in one application asdescribed, could be three tape layers, with a substrate and ground planelayer additionally added when necessary. Each layer could be about threemil thick. This type of multilayer low temperature transfer tape aluminasubstrate is particularly attractive for use with Galium Arsenide (GaAs)chips because of the CTE (coefficient of thermal expansion) of about7.1. This material can also be used with heat transfer vias and hasexcellent thermal conduction. The MMIC GaAs chips can be attacheddirectly to a substrate using gold tin solder preforms or silver epoxy.

[0039] As shown in FIG. 4B, the top one or two layers 66 would havecut-outs that are made substantially exactly to the size of any MMICchips to be used in the MMIC chip package. As shown in FIG. 4B, a firstchip cut-out 66 a would receive a low noise amplifier MMIC chip of thereceiver circuit and a second chip cut-out 66 b would receive a mixerMMIC chip. The top layers could mount a portion of the formed imagereject filter used in a receiver. Other local oscillator, DC, RF and IFterminals and pads 66 c could be formed as required.

[0040]FIGS. 5A and 5B illustrate a transmitter implementation in asingle transmitter MMIC chip package 34 and the associated circuit (FIG.5A), which includes a mixer 68 that receives an intermediate frequencyand local oscillator signal. A bandpass filter 69 is operable with apower amplifier 70, which receives DC signals and radio frequencysignals in a circuit architecture of the type known to those skilled inthe art. The circuit includes the appropriate capacitors 71 and groundconnections and the gate and drain voltages (V_(g) and V_(d)). Thefilter 69 is operative as a local oscillator signal reject filter.

[0041]FIG. 5B illustrates a plan view of the multilayer substrate board72 for the transmitter that could be formed from low temperatureco-fired ceramic materials using low temperature transfer tape. Thisview shows a power amplifier 70 connected by pads 73 to the localoscillator reject filter 69 and mixer 68. Isolation vias 74 are alsoformed around the local oscillator reject filter 69. Terminals 75 areincluded as in the multilayer substrate board shown in FIG. 2B.

[0042]FIGS. 6A and 6B illustrate a local oscillator multiplierimplementation in a single composite MMIC chip package 36. The circuitthat can be used as part of the chip package 36 is shown in FIG. 6A andincludes an x-band mixer 76 that receives a DC signal associated withthe gate voltage V_(g). Capacitors 77 are connected to ground. Afeedback loop circuit 78 is operative with the amplifier 79, which isinterconnected to the bandpass filter 80 for rejecting a fundamentalfrequency. X-band and KA-band signals are operative with the localoscillator multiplier circuit as illustrated. The amplifier receivesgate voltage V_(g) and the feedback loop circuit 78 is operative withdrain voltage V_(d). FIG. 6B illustrates an exemplary plan view of themultilayer substrate board 82 with the amplifier 79, filter circuit 80and X3 band mixer 76, including the isolation vias 83, terminals 84, andvarious pads 85 of the type as described before.

[0043] Naturally, the type of circuits and choice of embeddedcomponents, signal traces, circuit lines, such as microstrip lines, andthe vias formed in the substrate can vary in design, fabrication, andimplementation depending on the design and fabrication techniques chosenby one skilled in the art.

[0044] A MMIC chip package, whether receiver, transmitter or localoscillator multiplier, can be formed in accordance with the presentinvention using various techniques known to those skilled in the art. Inone non-limiting example, the alumina base plate, cover, multilayerthick film having the embedded passives and filters, and MMIC chips canbe delivered in waffle packs or similar packaging. These packages areplaced on an automatic Pick and Place (P&P) machine that could beprogrammed to dispense silver epoxy, pick the MMIC chips, and place themin respective cut-outs on the top layers multilayer substrate board ontop of the epoxy. The assembly is heated to a temperature to effectcuring of the silver epoxy. This process is accomplished for everycomposite chip. It is estimated that the total pick and place per chippackage would take about ten seconds and the number of chips that couldbe packaged in a day using a single pick and place machine could be wellover 8,000.

[0045] After the epoxy is cured, the chips are wire bonded for DC and RFconnections. After wire bonding, a cover is attached on top of the chippackage assembly using non-conductive epoxy. The entire composite chipis subjected to low temperature curing cycle to cure the non-conductiveepoxy. Composite chips can now be ready to be used as surface mountparts.

[0046] For purposes of illustration only, representative examples offabrication techniques for MMIC CHIP transceivers, multilayer thick filmsubstrates, and filters that are formed in multilayer substrates areillustrated in FIGS. 7-15 to give examples of the types of manufacturingand fabrication methods and devices that could be modified by thoseskilled in the art for use with the present invention.

[0047] FIGS. 7-9 illustrate a radio frequency transceiver module usingthick film technology, including green tape low temperature co-firedceramic technology. More particularly, FIG. 8 illustrates a multilayersubstrate board 150 having different layers of low temperature transfertape (LTTT) sheets, including a DC signals layer 152, ground layer 154,embedded capacitors and resistors layer 156, solder preform layer 158,and top layer 160.

[0048]FIG. 7 illustrates how the different layers in FIG. 8 can becombined to form a multilayer thick film substrate board 150 that isreceived on a base plate 162. A channelization plate 164 is illustratedas an example (if used) and a radio frequency cover 166. Isolation vias167 are shown and illustrated. These vias can extend across multiplelayers to a ground layer. They can be formed by techniques known tothose skilled in the art.

[0049]FIG. 9 shows a MMIC transceiver module 170 having a waveguideinterface 172 built into a channelization plate 164 and showingintermediate frequency outputs 174, a local oscillator input 176, anintermediate frequency input 178, various DC pins 180, module connectors182, and external connectors 184 positioned on a CCA.

[0050] The MMIC module assembly process is improved by using the lowcost multilayer transfer tape thick film board 150 for attaching MMICchips 186 and embedding all the peripherals and electrical connectionsin the multilayer thick film.

[0051] MMIC module production is made similar to surface mounttechnology by packaging the MMIC modules to allow complete automation ofthe assembly process. As shown in FIG. 7, this module, as an example, ismade up of a base plate 162, multilayer alumina substrate 150 formedfrom the layers, a channelization plate 164 and a cover 166.

[0052] The base plate 162 can be a gold plated flat sheet of low costCTE matched material, such as Cooper Tungsten (CuW), about {fraction(1/8)} inch thick, in one aspect of the invention. The plate is only cutto size and requires no machining.

[0053] The multilayer substrate board 150 is fabricated using the LowTemperature Transfer Tape (LTTT) technology (similar to green tapetechnology), as well known to those skilled in the art, similar to lowtemperature co-fired ceramic (LTCC) sheets. The LTTT processing closelyfollows the steps used in well established multilayer thick filmprocessing, as known to those skilled in the art. The multipledielectric printing per layer is replaced by a tape lamination step.Both gold and silver conductor systems can be used with LTTT.Interconnects and vias are formed by techniques known to those skilledin the art.

[0054] Although the LTTT process for forming multilayer structures canbe applied to a wide variety of dielectric materials and substrate, thematerial selected for this aspect of the present invention can be astandard 96% alumina substrate, as a non-limiting example. Any specialformulated conductor materials are screen printed on the aluminasubstrate, using standard thick film equipment and processing techniquesdeveloped for forming conductive interconnects and interlayer vias. Thetape sheets are bonded to the substrate using a combination of heat andpressure with a range established by those skilled in the art.

[0055]FIG. 8 shows an example of the type of layers that can be used toform an alumina board. The number of layers can be as high as 12, ormore, although in the previously described embodiment above, threelayers were considered. The layers could be formed on a base substrate(S), as illustrated, of the type known to those skilled in the art. Eachlayer could be about 2 to about 4 mil thick, and typically about 3 milthick, and can be used to carry low frequency RF signals, DC signals,ground, or embedded passive components, such as capacitors and resistorsas described before. Interconnect or ground vias could be implementedacross one or more layers of LTTT film.

[0056] This multilayer LTTT alumina substrate is particularly attractivefor use with GaAs chip because of its beneficial CTE coefficient (about7.1). Also, this material has excellent thermal conduction (25-200W/MK). Any MMIC GaAs chips could be attached directly to the substrateusing gold tin solder pre-forms or silver epoxy. In cases of thermalconcerns, the chips could be attached directly to the base plate usingCTE matched shims, or on top of thermal vias that are connected to thebottom surface. These vias can be formed by techniques known to thoseskilled in the art. For ease of assembly and wire bonding, the top layer(3 to 4 mil thick) can have cut-outs made exactly to the size of thechips (see FIG. 9) as described relative to previous figures.

[0057] The multilayer substrate costs on the average about $1.5 to $2.5per layer per square inch. Up to 275 vias per square inch are possible.

[0058] The channelization plate 164, if used, could be formed of goldplated aluminum, although other materials could be used. The channels164 a can be cut using wire EDM methods. Any channels 164 a can becreated to provide the isolation required between the transmitter andreceiver signals and generate a cut off to the lower frequency signals.The RF cover could also be made of gold plated aluminum.

[0059]FIG. 9 illustrates a transceiver module including a surface mountcircuit card assembly (CCA) used to provide a regulator/controllerfunction. SMA connectors could be attached directly to the multilayersubstrate. An RF interface waveguide is provided as part of thechannelization plate.

[0060] The module shown in FIG. 9 can be assembled by the followingtechnique as one non-limiting example.

[0061] 1. Pick and place all the MMIC chips on to the multilayer aluminasubstrate. The substrate should have all the low frequency signalsconnections, DC connections, ground connections, passive devices alreadyembedded in the layers and the solder pre-form.

[0062] 2. Pick and place the DC connector and any low frequency SMAconnectors used for IF and LO signals.

[0063] 3. Flow the solder in a vacuum oven to attached the MMIC die andthe connectors to the substrate board. Silver epoxy may be used in placeof the solder.

[0064] 4. Wire/wedge bond the MMIC chips to the substrate board.

[0065] 5. Attach the substrate board to the base plate and thechannelization plate using epoxy.

[0066] 6. Install RF cover.

[0067] 7. Install the regulator/controller surface mount CCA.

[0068] Referring now to FIGS. 10-12, there is illustrated a filterstructure as parallel coupled line filters produced using thick film,low temperature co-fired ceramic materials. The following description isgiven as an example of fabrication techniques that could be modified andapplied to the filter construction used in MMIC chip packages 30, 34 and36 as described above. Further details are found in commonly assignedand copending U.S. patent application Ser. No. 09/933,269, filed Aug.20, 2001, entitled “Millimeter Wave Filter For Surface MountApplication,” the disclosure which is hereby incorporated by referencein its entirety.

[0069]FIG. 10 shows an exemplary filter formed as a two-pole filter 220with individual hairpin resonators 222. The filter is made using analumina carrier plate 224 that is about 25 mil thick and acts as adielectric base plate having opposing surfaces. A ground plane layer 226is formed on a surface of the dielectric base plate 224. A lowtemperature co-fired ceramic layer 228 is positioned over the groundplane layer 226 and defines an outer filter surface 230. This lowtemperature co-fired ceramic layer 228 is formed of a layer of lowtemperature co-fired ceramic 228, formed as Low Temperature TransferTape (LTTT), i.e., green tape. It is formed about 5 to about 7 milsthick with a ground plane layer separating the dielectric base plate andthe green tape layer.

[0070] A plurality of coupled line millimeter wavelength hairpinresonators 222 are formed as either stripline or microstrip andpositioned on the outer filter surface 230. Radio frequency terminalcontacts 232 are positioned on the surface of the dielectric base plateopposite the low temperature co-fired ceramic layer 228 formed from thegreen tape. As illustrated, conductive vias 234 extend through the lowtemperature co-fired ceramic layer 228, ground plane layer 226, anddielectric base plate, i.e., carrier plate 224, and each interconnectthe radio frequency terminal contacts 232 and the end positioned coupledline resonators 222 a formed on the outer filter surface 230.

[0071] The dielectric base plate is formed about 10 to about 35 milsthick (and preferably in one aspect about 25 mils thick) and formed fromalumina, also known as aluminum oxide, a well known ceramic dielectricmaterial. Other dielectric materials could be used as suggested by thoseskilled in the art.

[0072] As shown in FIG. 12, a lower ground plane layer 235 is positionedon the surface of the dielectric base plate 224 opposite the upperpositioned ground plane layer 226 and the green tape layer 228 andisolated from the radio frequency terminal contacts as illustrated bythe two parallel formed lines. A plurality of isolation vias 236 extendthrough the low temperature co-fired ceramic (green tape) layer 228 anddielectric base plate 224 and substantially engage the parallel stripsforming lower ground plane layer 235. As shown in FIG. 10, the isolationvias 236 isolate the formed filter.

[0073] A dielectric or other cover 238 can be positioned over the outerfilter surface 230 (and cover an entire substrate surface forming partof the MMIC chip package). This cover 238 could have a metallizedinterior surface 240, such as formed from gold layer or similar materialand could be spaced from the hairpin resonators 222 for generating apredetermined cut-off frequency. This cover 238 also shields the formedfilter from outside interference. The distance between the microstripand the top of the cover could be about 20 mils, but can vary dependingon what is required by one skilled in the art. If the filter is made ofstripline only, a cover 238 may not be required.

[0074] FIGS. 13-15 illustrate a plurality of green tape layers 250 thatare formed as low temperature co-fired ceramic layers and positionedover a first ground plane layer. Intervening ground plane layers 252 arepositioned between green tape layers 250. This plurality of lowtemperature co-fired ceramic layers 250 that are formed as green tapeand the interposed ground plane layers 252 form a low temperatureco-fired ceramic multilayer substrate board. A plurality of millimeterwavelength stripline hairpin resonators 254 are formed on the ceramiclayers 250 between the outer filter 230 surface and the dielectric base(carrier) plate 224 and isolated by the interposed ground plane layers252. As illustrated, conductive vias 257 interconnect the hairpinresonators 256 formed on the ceramic layers and outer filter surface.This configuration illustrates a multilayer, six-pole filter 258, whichis created by cascading three two-pole filters in three differentlayers, with one microstrip filter 262 and two stripline filters 264, asillustrated.

[0075] These filters can have a nominal size of about 150 mil by about100 mil and can be fabricated on large, six inch single layer ormultilayer wafers and cut to size with an appropriate laser. The aluminacover 238 having the metallized interior surface can be attached to thefilter using conductive silver epoxy. Where the top filter resonatorsare made of stripline only, a cover will not be required.

[0076] Many modifications and other embodiments of the invention willcome to the mind of one skilled in the art having the benefit of theteachings presented in the foregoing descriptions and the associateddrawings. Therefore, it is to be understood that the invention is not tobe limited to the specific embodiments disclosed, and that themodifications and embodiments are intended to be included within thescope of the dependent claims.

That which is claimed is:
 1. A millimeter wave (MMW) transceiver modulecomprising: a circuit board; and a microwave monolithic integratedcircuit (MMIC) transceiver chip set that is surface mounted on thecircuit board, said MMIC transceiver chip set further comprising, areceiver MMIC chip package, a transmitter MMIC chip package and a localoscillator (LO) multiplier MMIC chip package that are each surfacemounted on the circuit board and operatively connected to each other formillimeter wave transceiver operation, each MMIC chip package includinga base; a multilayer substrate board formed from layers of lowtemperature transfer tape and received on said base plate, saidmultilayer substrate board having at least three layers and carrying RFsignals, DC signals, grounding, and embedded passive componentsincluding resistors and capacitors; and at least one MMIC chip receivedon the multilayer substrate.
 2. A millimeter wave (MMW) transceivermodule according to claim 1, and further comprising a filter formed onthe multilayer substrate board and operatively connected to said MMICchip.
 3. A millimeter wave (MMW) transceiver module according to claim2, wherein said filter formed on the multilayer substrate boardcomprises vertically stacked resonators in the multilayer substrateboard.
 4. A millimeter wave (MMW) transceiver module according to claim3, wherein said filter comprises a plurality of coupled line millimeterwavelength resonators formed as stripline or microstrip and positionedon an outer filter surface defined on the multilayer substrate board,radio frequency contacts, and conductive vias extending through themultilayer substrate board.
 5. A millimeter wave (MMW) transceivermodule according to claim 2, wherein said filter further comprises aplurality of isolation vias extending through said multilayer substrateboard.
 6. A millimeter wave (MMW) transceiver module according to claim1, wherein said base comprises an alumina plate that is metal plated. 7.A millimeter wave (MMW) transceiver module according to claim 1, andfurther comprising a heat sink vias formed within the base.
 8. Amillimeter wave (MMW) transceiver module according to claim 1, whereinsaid multilayer substrate board further comprises a substrate on whichlow temperature transfer tape layers are mounted.
 9. A millimeter wave(MMW) transceiver module according to claim 1, wherein each layer of lowtemperature transfer tape is about 3 mil thick.
 10. A millimeter wave(MMW) transceiver module according to claim 1, wherein a top layer ofthe multilayer substrate board has chip cutouts for receiving MMIC chipstherein.
 11. A millimeter wave (MMW) transceiver module according toclaim 1, said multilayer substrate board comprises a plurality ofinterconnects and interconnects vias positioned within low temperaturetransfer tape layers forming the substrate board.
 12. A millimeter wave(MMW) transceiver module according to claim 1, wherein said receiverMMIC chip package comprises a low noise amplifier, a mixer and an imagereject filter.
 13. A millimeter wave (MMW) transceiver module accordingto claim 1, wherein said transmitter MMIC chip package comprises a poweramplifier, mixer and a local oscillator signal reject filter.
 14. Amillimeter wave (MMW) transceiver module according to claim 1, whereinsaid local oscillator multiplier MMIC chip package comprises an x-bandmixer, amplifier and a filter for filtering any fundamental frequency.15. A microwave monolithic integrated circuit (MMIC) transceiver chipset for surface mounting on a circuit board and forming a millimeterwave (MMW) transceiver module comprising: a receiver MMIC chip package,a transmitter MMIC chip package and a local oscillator (LO) multiplierMMIC chip package, each MMIC chip package comprising, a base; amultilayer substrate board formed from layers of low temperaturetransfer tape and received on said base, said multilayer substrate boardhaving at least three layers and carrying RF signals, DC signals,grounding, and embedded passive components including resistors andcapacitors; at least one MMIC chip received on the multilayer substrate;said receiver MMIC chip package including a low noise amplifier, a mixerand image reject filter; said transmitter MMIC chip package including amixer, power amplifier and local oscillator signal reject filter; andsaid local oscillator multiplier MMIC chip package including anamplifier, mixer, feedback loop circuit and filter for filtering anyfundamental frequency.
 16. A microwave monolithic integrated circuit(MMIC) transceiver chip set according to claim 15, wherein each of saidfilters for each chip package further comprise isolation vias extendingthrough the multilayer substrate board.
 17. A microwave monolithicintegrated circuit (MMIC) transceiver chip set according to claim 15,wherein said base comprises an alumina base that is metal plated.
 18. Amicrowave monolithic integrated circuit (MMIC) transceiver chip setaccording to claim 15, wherein a top layer of the multilayer substrateboard has chip cutouts for receiving MMIC chips therein.
 19. A microwavemonolithic integrated circuit (MMIC) transceiver chip set according toclaim 15, wherein said multilayer substrate board comprises a pluralityof interconnects and interconnect vias positioned within the lowtemperature transfer tape layers forming the multilayer substrate board.20. A method of forming a millimeter wave (MMW) transceiver modulecomprising the step of: surface mounting on a circuit board a receiverMMIC chip package, a transmitter MMIC chip package and a localoscillator (LO) multiplier MMIC chip package, each chip packagecomprising, a base; a multilayer substrate board formed from layers oflow temperature transfer tape and received on said base plate, saidmultilayer substrate board having at least three layers and carrying RFsignals, DC signals, grounding, and embedded passive componentsincluding resistors and capacitors; at least one MMIC chip received onthe multilayer substrate; said receiver MMIC chip package including alow noise amplifier, a mixer and image reject filter; said transmitterMMIC chip package including a mixer, power amplifier and localoscillator signal reject filter; and said local oscillator multiplierMMIC chip package including an amplifier, mixer, feedback loop circuitand filter for filtering any fundamental frequency.